High Gm In0.5Al0.5As/In0.5Ga0.5As high electron mobility transistors grown lattice-mismatched on GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
2. Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realization
3. Reduction in dislocation densities in the step‐graded growth of InGaAs by molecular‐beam epitaxy
4. Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance
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