Initial oxidation of Si(111)-7×7 surfaces studied by photoelectron spectroscopy combined with medium energy ion scattering
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference46 articles.
1. General Relationship for the Thermal Oxidation of Silicon
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2. Study of Local Valence Electronic States of SiO2Ultrathin Films Grown on Si(111) by Using Auger Photoelectron Coincidence Spectroscopy: Upward Shift of Valence-Band Maximum Depending on the Interface Structure;Journal of the Physical Society of Japan;2012-07-15
3. Atomic Lineation of Products during Oxidation of Si(111)-7 × 7 Surface Using O2 at 300 K;The Journal of Physical Chemistry C;2012-02-06
4. Growth of epitaxially oriented Ag nanoislands on air-oxidized Si(111)-(7×7) surfaces: Influence of short-range order on the substrate;Applied Surface Science;2012-01
5. Initial Products in the Oxidation of Si(111)-7×7 Surface Using O2 at 300 K and Those Formation Processes Observed by Real-time Synchrotron Radiation X-ray Photoelectron Spectroscopy;Hyomen Kagaku;2012
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