Study of Local Valence Electronic States of SiO2Ultrathin Films Grown on Si(111) by Using Auger Photoelectron Coincidence Spectroscopy: Upward Shift of Valence-Band Maximum Depending on the Interface Structure-Reference-Cited by-同舟云学术

Study of Local Valence Electronic States of SiO2Ultrathin Films Grown on Si(111) by Using Auger Photoelectron Coincidence Spectroscopy: Upward Shift of Valence-Band Maximum Depending on the Interface Structure

Published:2012-07-15 Issue:7 Volume:81 Page:074706
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Kakiuchi Takuhiro¹,Fujita Narihiko²,Mase Kazuhiko¹³,Tanaka Masatoshi²

Affiliation:

1. Department of Materials Structure Science, School of High Energy Accelerator Science, The Graduate University for Advanced Studies, Tsukuba, Ibaraki 305-0801, Japan

2. Department of Physics, Faculty of Engineering, Yokohama National University, Yokohama 240-8501, Japan

3. Institute of Materials Structure Science, KEK, Tsukuba, Ibaraki 305-0801, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.1143/JPSJ.81.074706

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