Atomic Lineation of Products during Oxidation of Si(111)-7 × 7 Surface Using O2 at 300 K
Author:
Affiliation:
1. Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp2065453
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5. Optimized Silicidation Technique for Source and Drain of Fin-Type Field-Effect Transistor
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2. Initial oxidation kinetics of Si(113)-(3 × 2) investigated using supersonic seeded molecular beams;Surface Science;2020-07
3. Temporally and Spatially Resolved Oxidation of Si(111)-(7 × 7) Using Kinetic Energy Controlled Supersonic Beams in Combination with Scanning Tunneling Microscopy;The Journal of Physical Chemistry C;2016-04-08
4. Self-accelerating oxidation on Si(111)7 × 7 surfaces studied by real-time photoelectron spectroscopy;Surface and Interface Analysis;2014-06-24
5. Synchrotron Radiation Photoelectron Spectroscopy Study on Oxide Evolution during Oxidation of a Si(111)-7 × 7 Surface at 300 K: Comparison of Thermal Equilibrium Gas and Supersonic Molecular Beams for Oxygen Adsorption;The Journal of Physical Chemistry C;2014-04-28
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