Self-accelerating oxidation on Si(111)7 × 7 surfaces studied by real-time photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Self-accelerating oxidation on Si(111)7 × 7 surfaces studied by real-time photoelectron spectroscopy

Published:2014-06-24 Issue:12-13 Volume:46 Page:1147-1150
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Tang Jiayi¹,Nishimoto Kiwamu¹,Ogawa Shuichi¹,Akitaka Yoshigoe²,Ishidzuka Shinnji³,Watanabe Daiki¹,Teraoka Yuden²,Takakuwa Yuji¹

Affiliation:

1. Institute of Multidisciplinary Research for Advanced Materials; Tohoku University; 2-1-1 Katahira, Aoba-ku Sendai 980-8577 Japan

2. Japan Atomic Energy Agency; Sayo Hyogo 679-5148 Japan

3. Nagaoka University of Technology; Nagaoka Niigata 940-2188 Japan

Funder

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference21 articles.

1. Improved independent gate N-type FinFET fabrication and characterization

2. General Relationship for the Thermal Oxidation of Silicon

3. Thermal Oxidation of Silicon in Dry Oxygen Growth‐Rate Enhancement in the Thin Regime: I . Experimental Results

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Roles of strain and carrier in silicon oxidation;Japanese Journal of Applied Physics;2020-04-24

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