Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction-Reference-Cited by-同舟云学术

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Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction

Published:2018-08 Issue: Volume:154 Page:190-198
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Liu Xiaohua,Zhou Dayu,Guan Yan,Li Shuaidong,Cao Fei,Dong Xianlin

Funder

National Natural Science Foundation of China

Central Universities of China

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference69 articles.

1. Ferroelectricity in hafnium oxide thin films;Böscke;Appl. Phys. Lett.,2011

2. Phase transitions in ferroelectric silicon doped hafnium oxide;Böscke;Appl. Phys. Lett.,2011

3. Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications;Müller;Appl. Phys. Lett.,2011

4. Development of hafnium based high-k materials—a review;Choi;Mater. Sci. Eng. R Rep.,2011

5. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology;He;Prog. Mater. Sci.,2011

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1. Optimization of the 4 nm-Thick Hf_1–xZr_xO₂ Film with Low Operating Voltage and High Endurance for Ferroelectric Random Access Memory;ACS Applied Electronic Materials;2024-09-12

2. Large ferroelectric polarization and high dielectric constant in HfO2-based thin films via Hf0.5Zr0.5O2/ZrO2 nanobilayer engineering;Journal of Materiomics;2024-08

3. Computational modeling of uniaxial antiferroelectric and antiferroelectric‐like actuators;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07

4. Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories;Applied Physics Letters;2024-05-06

5. The Enhanced Polarization Switching Speed and Endurance in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers;IEEE Electron Device Letters;2024-05

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