The Enhanced Polarization Switching Speed and Endurance in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers-Reference-Cited by-同舟云学术

The Enhanced Polarization Switching Speed and Endurance in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Published:2024-05 Issue:5 Volume:45 Page:829-832
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Li Yu-Chun¹,Li Xiao-Xi²,Huang Zi-Ying¹^ORCID,Zhu Xiao-Na¹^ORCID,Zhang David Wei¹,Lu Hong-Liang¹^ORCID

Affiliation:

1. State Key Laboratory of ASIC and Systems, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai, China

2. Emerging Device and Chip Laboratory, Hangzhou Institute of Technology, Xidian University, Hangzhou, China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Shanghai Sailing Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10509537/10476595.pdf?arnumber=10476595

Reference23 articles.

1. Enhanced ferroelectricity in ultrathin films grown directly on silicon

2. The fundamentals and applications of ferroelectric HfO2

3. Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics

4. Highly Enhanced Polarization Switching Speed in HfO₂‐based Ferroelectric Thin Films via a Composition Gradient Strategy

5. Scale-free ferroelectricity induced by flat phonon bands in HfO2

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