Interfacial reactions between ultra-thin Ni-layer and clean 6H-SiC(0001) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference30 articles.
1. A critical review of ohmic and rectifying contacts for silicon carbide
2. High‐temperature ohmic contact to n‐type 6H‐SiC using nickel
3. Soft X-ray emission study of thermally treated Ni(film)/4H–SiC(substrate) interface
4. Formation of cobalt disilicide films on(3×3)6H−SiC(0001)
5. Growth of epitaxial CoSi2 on 6H-SiC(0001)Si
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1. Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC;Key Engineering Materials;2023-07-31
2. Direct observation of interfacial reaction of Ni/6H-SiC and carbon redistribution by in situ transmission electron microscopy;Materials Characterization;2018-06
3. Role of carbon in the formation of ohmic contact in Ni/4HSiC and Ni/Ti/4HSiC;Applied Surface Science;2012-07
4. Graphene on SiC(0001) and SiC(0001̅) surfaces grown via Ni-silicidation reactions;Surface Science;2010-08
5. Kinetic study of interfacial solid state reactions in the Ni/4H–SiC contact;Applied Surface Science;2009-05
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