Growth of epitaxial CoSi2 on 6H-SiC(0001)Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1412842
Reference13 articles.
1. On the nanometer‐scale solid‐state reactions at thin‐film Ni/amorphous SiC and Co/amorphous SiC interfaces
2. Thermally stable low ohmic contacts to p-type 6HSiC using cobalt silicides
3. Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)
4. Investigation of Co/SiC interface reaction
5. Cobalt silicide formation on 6H silicon carbide
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomic scale flattening, step formation and graphitization blocking on 6H- and 4H-SiC{0 0 0 1} surfaces under Si flux;Semiconductor Science and Technology;2009-11-24
2. Atomic structure of the 6H–SiC(0001) nanomesh;Surface Science;2005-12
3. Structure of Co deposited 6H–SiC(0001);Surface Science;2005-12
4. Interfacial reactions between ultra-thin Ni-layer and clean 6H-SiC(0001) surface;Surface Science;2004-05
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