Structure of Co deposited 6H–SiC(0001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference28 articles.
1. On the nanometer‐scale solid‐state reactions at thin‐film Ni/amorphous SiC and Co/amorphous SiC interfaces
2. Thermally stable low ohmic contacts to p-type 6HSiC using cobalt silicides
3. Cobalt silicide formation on 6H silicon carbide
4. CoSi2 ohmic contacts to n-type 6HSiC
5. Formation of cobalt disilicide films on(3×3)6H−SiC(0001)
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1. Peculiar covalent bonding of C60/6H-SiC(0 0 0 1)-(3 × 3) probed by photoelectron spectroscopy;Journal of Physics: Condensed Matter;2018-11-23
2. Interaction of C60with clean and hydrogenated SiC-(3×3) probed through the unoccupied electronic states;Physical Review B;2013-09-17
3. Ohmic contact behaviour of Co/C/4H-SiC structures;Journal of Semiconductors;2011-04
4. Oxygen Influence on the Growth of Thin Hf Films on the 6H-SiC(0001) Surfaces;Surface and Interface Analysis;2010-09-09
5. Effect of Substrate Surface Reconstruction on Interaction with Adsorbates: Pt on 6H-SiC(0001);Langmuir;2010-02-05
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