Interface engineering in epitaxial growth of sputtered β-Ga2O3 films on Si substrates via TiN (111) buffer layer for Schottky barrier diodes-Reference-Cited by-同舟云学术

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Interface engineering in epitaxial growth of sputtered β-Ga2O3 films on Si substrates via TiN (111) buffer layer for Schottky barrier diodes

Published:2023-03 Issue: Volume:17 Page:100348
ISSN:2590-0498
Container-title:Materials Today Advances
language:en
Short-container-title:Materials Today Advances

Author:

Yen Chao-Chun,Singh Anoop Kumar,Wu Po-Wei,Chou Hsin-Yu,Wuu Dong-Sing^ORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,General Materials Science

Reference29 articles.

1. Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material;Dong;J. Semiconduct.,2019

2. Recent progress in Ga2O3 power devices;Masataka;Semicond. Sci. Technol.,2016

3. β-Ga2O3-based power devices: a concise review;Zhang;Crystals,2022

4. A review of the state-of-the-art in electronic cooling;Zhang;E-Prime,2021

5. X-ray photoelectron spectroscopy and X-ray diffraction study of the thermal oxide on gallium nitride;Wolter;Appl. Phys. Lett.,1997

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1. Wide and ultrawide-bandgap semiconductor surfaces: A full multiscale model;Applied Surface Science;2024-10

2. Improved Ga2O3 films on variously oriented Si substrates with Al2O3 or HfO2 buffer layer via atomic layer deposition;Micro and Nanostructures;2024-09

3. First-principles investigations and MOCVD growth of Si-doped β-Ga2O3 thin films on sapphire substrates for enhancing Schottky barrier diode characteristics;Materials Science in Semiconductor Processing;2024-08

4. Effects of growth temperature on phase transformation and crystal quality of Ga2O3 films grown on Si/AlN composite substrates by MOCVD;Materials Science in Semiconductor Processing;2024-08

5. Microstructure and optical properties of β-Ga2O3 thin films fabricated by pulsed laser deposition;Thin Solid Films;2024-05

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