Interface engineering in epitaxial growth of sputtered β-Ga2O3 films on Si substrates via TiN (111) buffer layer for Schottky barrier diodes-Reference-Cited by-同舟云学术

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Interface engineering in epitaxial growth of sputtered β-Ga2O3 films on Si substrates via TiN (111) buffer layer for Schottky barrier diodes

Published:2023-03 Issue: Volume:17 Page:100348
ISSN:2590-0498
Container-title:Materials Today Advances
language:en
Short-container-title:Materials Today Advances

Author:

Yen Chao-Chun,Singh Anoop Kumar,Wu Po-Wei,Chou Hsin-Yu,Wuu Dong-Sing^ORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,General Materials Science

Reference29 articles.

1. Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material;Dong;J. Semiconduct.,2019

2. Recent progress in Ga2O3 power devices;Masataka;Semicond. Sci. Technol.,2016

3. β-Ga2O3-based power devices: a concise review;Zhang;Crystals,2022

4. A review of the state-of-the-art in electronic cooling;Zhang;E-Prime,2021

5. X-ray photoelectron spectroscopy and X-ray diffraction study of the thermal oxide on gallium nitride;Wolter;Appl. Phys. Lett.,1997

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2. Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment;Materials Today Advances;2023-08

3. First‐Principles Study of Twin Boundaries and Stacking Faults in β‐Ga₂O₃;Advanced Materials Interfaces;2023-07-23

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