Strained SiGe-alloy layers formed by solid phase epitaxial growth of Ge+ ion implanted silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. SiGe-HBTs with high fT at moderate current densities
2. Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy
3. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
4. Symmetric Si/Si1−xGextwo‐dimensional hole gases grown by rapid thermal chemical vapor deposition
5. GeSiSi strained layer superlattices grown by low-pressure CVD
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1. Synthesis of SiGe layered structure in single crystalline Ge substrate by low energy Si ion implantation;Vacuum;2014-03
2. Effects of implantation energy and annealing temperature on the structural evolution of Ge+-implanted amorphous Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08
3. Randomization of heavily damaged regions in annealed low energy Ge+-implanted (001)Si;Ultramicroscopy;2004-01
4. Structural evolution in Ge+ implantation amorphous Si;Applied Surface Science;2003-05
5. Evolution of structural order in germanium ion-implanted amorphous silicon layers;Journal of Applied Physics;2002-07-15
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