Symmetric Si/Si1−xGextwo‐dimensional hole gases grown by rapid thermal chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105837
Reference9 articles.
1. Physics and applications of GexSi1-x/Si strained-layer heterostructures
2. Growth of Si1−xGex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors
3. Temperature control of silicon‐germanium alloy epitaxial growth on silicon substrates by infrared transmission
4. Effect of interface quality on the electrical properties ofp‐Si/SiGe two‐dimensional hole gas systems
5. Magneto-Oscillatory Conductance in Silicon Surfaces
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3. Issues of Nanoelectronics: A Possible Roadmap;Journal of Nanoscience and Nanotechnology;2002-07-01
4. Electrical properties of SiGe microstructures fabricated by C.V.D. and F.I.B. and their applications in detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-06
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