Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation-Reference-Cited by-同舟云学术

Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation

Published:2002-01 Issue:1-4 Volume:186 Page:246-255
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Mannino Giovanni,Privitera Vittorio,Solmi Sandro,Cowern Nicholas E.B

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Semiconductor Industry Association, International Technology Roadmap for Semiconductors: 2000 updated edition. Austin, TX, International SEMATECH, 2000

2. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

3. Energetics of Self-Interstitial Clusters in Si

4. Impurity Doping Processes in Si;Fair,1981

5. Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon

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