Precipitation of boron in silicon on high-dose implantation-Reference-Cited by-同舟云学术

Precipitation of boron in silicon on high-dose implantation

Published:2010-03 Issue:3 Volume:44 Page:285-288
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Feklistov K. V.,Fedina L. I.,Cherkov A. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610030024.pdf

Reference21 articles.

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3. S. Solmi, E. Landi, and F. Baruffaldi, J. Appl. Phys. 68, 3250 (1990).

4. A. Aseev, L. Fedina, D. Hoehl, and H. Barch, Clusters of Interstitial Atoms in Silicon and Germanium (Academy Verlag, Berlin, 1994; Nauka, Novosibirsk, 1991).

5. L. I. Fedina and A. L. Aseev, Fiz. Tverd. Tela 32, 60 (1990) [Sov. Phys. Solid State 32, 33 (1990)].

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