Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon-Reference-Cited by-同舟云学术

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Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon

Published:2006-11-15 Issue:10 Volume:100 Page:103533
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Capello L.,Metzger T. H.,Werner M.,van den Berg J. A.,Servidori M.,Ottaviano L.,Bongiorno C.,Mannino G.,Feudel T.,Herden M.,Holý V.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2363252

Reference27 articles.

1. Compact and comprehensive database for ion-implanted As profile

2. Extended defects in shallow implants

3. Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation

4. Comprehensive, physically based modelling of As in Si

5. Structural properties of ultra-low-energy ion-implanted silicon studied by combined X-ray scattering methods

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Understanding amorphization mechanisms using ion irradiation in situ a TEM and 3D damage reconstruction;Ultramicroscopy;2019-12

2. Shape Modification of Germanium Nanowires during Ion Irradiation and Subsequent Solid-Phase Epitaxial Growth;Advanced Materials Interfaces;2018-05-15

3. Band-gap narrowing in Mn-doped GaAs probed by room-temperature photoluminescence;Physical Review B;2015-12-04

4. Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices;Applied Physics Express;2008-01-25

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