Understanding amorphization mechanisms using ion irradiation in situ a TEM and 3D damage reconstruction-Reference-Cited by-同舟云学术

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Understanding amorphization mechanisms using ion irradiation in situ a TEM and 3D damage reconstruction

Published:2019-12 Issue: Volume:207 Page:112838
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Camara Osmane,Tunes Matheus A.,Greaves Graeme,Mir Anamul H.,Donnelly Stephen,Hinks Jonathan A.

Funder

Engineering and Physical Sciences Research Council

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Ion-beam-induced amorphization and recrystallization in silicon;Pelaz;J. Appl. Phys.,2004

2. An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe;Edmondson;Scr. Mater.,2016

3. Amorphization of crystalline si due to heavy and light ion irradiation;Edmondson;J. Appl. Phys.,2009

4. Displacement criterion for amorphization of silicon during ion implantation;Christel;J. Appl. Phys.,1981

5. Kinetics of silicon amorphization by N+ implantation: dose rate and substrate temperature effects;Claverie;Mater. Sci. Eng. B,1989

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