Comprehensive, physically based modelling of As in Si

Author:

Pinacho R.,Jaraiz M.,Castrillo P.,Rubio J.E.,Martin-Bragado I.,Barbolla J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Point defects and dopant diffusion in silicon

2. Arsenic deactivation enhanced diffusion: A time, temperature, and concentration study

3. Clustering equilibrium and deactivation kinetics in arsenic doped silicon

4. Simulation of Semiconductor Processes and Devices;Jaraiz,2001

5. J.E. Rubio, M. Jaraiz, I. Martin-Bragado, R. Pinacho, P. Castrillo, J. Barbolla, presented at the Spring meeting E-MRS 2004 (symposium B) (in press).

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