Hydrogen plasma enhancement of boron activation in shallow junctions-Reference-Cited by-同舟云学术

Hydrogen plasma enhancement of boron activation in shallow junctions

Published:2004-11 Issue:18 Volume:85 Page:4052-4054
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vengurlekar A.,Ashok S.,Kalnas C. E.,Theodore N. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1811394

Reference21 articles.

1. Scaling Transistors into the Deep-Submicron Regime

2. J.Y. Jin, I. Rusakova, Q. Li, J. Li, and W.K. Chu, in Si Front-End Processing Physics and Technology of Dopant-Defect Interactions II, edited by A. Agarwal, L. Pelaz, H-H. Vuong, P. Packan, and M. Kase [Mater. Res. Soc. Symp. Proc.MRSPDH0272-9172 610, 5–6 (2000)].

3. Enhanced low temperature electrical activation of B in Si

4. Point Defect Engineering and Its Application in Shallow Junction Formation

5. Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High and Uniform Phosphorus Doping in Germanium Through a Modified Plasma Assisted Delta Doping Process With H₂ Plasma Treatment;IEEE Electron Device Letters;2022-08

2. Effect of hydrogen implantation on low-temperature activation of boron in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-10

3. Low-temperature plasma processing for Si photovoltaics;Materials Science and Engineering: R: Reports;2014-04

4. Plasma-aided fabrication in Si-based photovoltaic applications: an overview;Journal of Physics D: Applied Physics;2011-04-14

5. Thermal Activation in Ion-shower-doped Poly-Si;Journal of the Korean Physical Society;2011-02-15