Low energy boron implantation in silicon and room temperature diffusion
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
2. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
3. Performance and processing line integration of a silicon molecular beam epitaxy system
4. Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles
5. Diffusion of boron in silicon during post‐implantation annealing
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2. Annealing effect in boron-induced interface charge traps in Si/SiO2 systems;Journal of Applied Physics;2013-01-14
3. Influence of Ge content on the optical properties ofXandWcenters in dilute Si-Ge alloys;Physical Review B;2011-10-25
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