Annealing effect in boron-induced interface charge traps in Si/SiO2 systems
Author:
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4773527
Reference35 articles.
1. Boron Segregation at Si ‐ SiO2 Interface as a Function of Temperature and Orientation
2. Degradation of oxynitride gate dielectric reliability due to boron diffusion
3. Suppression of boron transport out of p[sup +] polycrystalline silicon at polycrystalline silicon dielectric interfaces
4. Impact of boron penetration on gate oxide reliability and device lifetime in p+-poly PMOSFETs
5. Effect of boron on gate oxide degradation and reliability in PMOS devices
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of interface charge traps in PE-TEOS and HDP oxide with different annealing temperatures using time-dependent second-harmonic generation;Nonlinear Optics and Applications XIII;2023-06-05
2. Polarity Reversal of Terahertz Electric Field from Heavily p-Doped Silicon Surfaces;Chinese Physics Letters;2021-07-01
3. NOx Emission Reduction Technology for Marine Engine Based on Tier-III: A Review;Journal of Thermal Science;2020-08-10
4. Terahertz emission and optical second harmonic generation from Si surfaces;Optical Materials Express;2019-04-29
5. Model of third harmonic generation and electric field induced optical second harmonic using simplified bond-hyperpolarizability model;Journal of the Optical Society of America B;2015-03-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3