Foreword to the special issue on wide-bandgap (WBG) semiconductors: from fundamentals to applications
Author:
Affiliation:
1. Tianjin University, China
2. Institute of Microelectronics of Chinese Academy of Sciences, China
3. Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Germany
Publisher
AIP Publishing
Subject
Automotive Engineering
Link
https://aip.scitation.org/doi/pdf/10.1016/j.npe.2021.01.001
Reference7 articles.
1. Advances in graphene reinforced metal matrix nanocomposites: Mechanisms, processing, modelling, properties and applications
2. Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide
3. Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser
4. Surface defects in 4H-SiC homoepitaxial layers
5. Determination of failure degree of 1.2 kV SiC MOSFETs after short-circuit test using an improved test setup
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