Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide-Reference-Cited by-同舟云学术

Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide

Published:2020-12 Issue:4 Volume:3 Page:211-217
ISSN:1672-6030
Container-title:Nanotechnology and Precision Engineering
language:en
Short-container-title:Nanotechnology and Precision Engineering

Author:

Wang Xiuhong¹²,Zhao Junlei²³,Xu Zongwei¹,Djurabekova Flyura²,Rommel Mathias⁴,Song Ying¹,Fang Fengzhou¹

Affiliation:

1. State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China

2. Department of Physics and Helsinki Institute of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki, Finland

3. Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China

4. Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystrasse 10, 91058 Erlangen, Germany

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

State Administration of Foreign Experts Affairs and the Ministry of Education of China

University of Helsinki

Publisher

AIP Publishing

Subject

Automotive Engineering

Link

https://aip.scitation.org/doi/pdf/10.1016/j.npe.2020.11.002

Reference33 articles.

1. Silicon carbide high-power devices

2. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

3. Thermal conductivity of 4H-SiC single crystals

4. Quasiparticle band structure of silicon carbide polytypes

5. Challenges for energy efficient wide band gap semiconductor power devices

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