Temperature dependent aluminum induced crystallization of amorphous germanium thin films-Reference-Cited by-同舟云学术

Temperature dependent aluminum induced crystallization of amorphous germanium thin films

Published:2023-11 Issue: Volume:831 Page:140848
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Nasir Saba,Ali Adnan,Mahmood Khalid,Amin Nasir,Basha Beriham,Al-Buriahi M.S.,Alrowaili Z.A.,Ali Yasir,Fatima Qindeel,Anwar Hira,Shehzad Umair,Javaid Kashif^ORCID

Funder

Princess Nourah Bint Abdulrahman University

Higher Education Commission, Pakistan

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

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4. Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass;Moto;Appl. Phys. Lett.,2019

5. High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization;Toko;Sci. Rep.,2017

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