Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass-Reference-Cited by-同舟云学术

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Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass

Published:2019-05-27 Issue:21 Volume:114 Page:212107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Moto K.¹²^ORCID,Yamamoto K.³^ORCID,Imajo T.¹,Suemasu T.¹,Nakashima H.⁴,Toko K.¹⁵

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

2. JSPS Research Fellow, 8 Ichiban-cho, Chiyoda-ku, Tokyo 102-8472, Japan

3. Interdisciplinary Graduate School of Engineering Science, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

4. Global Innovation Center, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

5. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

Funder

Japan Society for the Promotion of Science

Precursory Research for Embryonic Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5093952

Reference34 articles.

1. Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si

2. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

3. Academic and industry research progress in germanium nanodevices

4. Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

5. III–V/Ge channel MOS device technologies in nano CMOS era

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1. Low temperature (210 °C) fabrication of Ge MOS capacitor and controllability of its flatband voltage;Materials Science in Semiconductor Processing;2024-08

2. Formation and specific contact resistivity of NiGe on polycrystalline Ge made by flash lamp annealing;Journal of Alloys and Compounds;2024-06

3. Grain-Boundary-Aligned Ge Thin Films Formed by Au-Induced Lateral Crystallization with a Multilayer Structure;Crystal Growth & Design;2024-05-02

4. Evaluation of extremely thin polycrystalline germanium films and their TFT performance fabricated at 400 °C by Cu-induced crystallization on a glass substrate;Japanese Journal of Applied Physics;2024-05-01

5. Strain-dependent grain boundary properties of n-type germanium layers;Scientific Reports;2024-04-03

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