Recombination pathways and hole leakage behavior in InGaN/GaN multiple quantum wells with V-shaped pits-Reference-Cited by-同舟云学术

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Recombination pathways and hole leakage behavior in InGaN/GaN multiple quantum wells with V-shaped pits

Published:2019-12 Issue: Volume:136 Page:106284
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhang Yihong,Lv Quanjiang,Zheng Changda,Gao Jiangdong,Zhang Jianli,Liu Junlin

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Key Technology Research and Development Program of Jiangxi Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference26 articles.

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3. Comparison between blue lasers and light-emitting diodes for future solid-state lighting;Wierer;Laser Photonics Rev.,2013

4. Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop;Iveland;Phys. Rev. Lett.,2013

5. Origin of efficiency droop in GaN-based light-emitting diodes;Kim;Appl. Phys. Lett.,2007

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2. Optimization of thickness in hole blocking layer of AlGaN-based deep ultraviolet laser diodes;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

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4. Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer;Journal of Russian Laser Research;2022-07

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