Optimization of thickness in hole blocking layer of AlGaN-based deep ultraviolet laser diodes-Reference-Cited by-同舟云学术

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Optimization of thickness in hole blocking layer of AlGaN-based deep ultraviolet laser diodes

Published:2023-02-07 Issue: Volume: Page:
ISSN:
Container-title:2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
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Author:

Yin Mengshuang¹,Zhang Aoxiang¹,Xu Yuan¹,Wang Fang¹,Liou Juin. J.¹,Liu Yuhuai¹

Affiliation:

1. Zhengzhou University,National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Information Engineering,Zhengzhou,P. R. China,450001

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10070854/10070925/10071110.pdf?arnumber=10071110

Reference11 articles.

1. Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes

2. Recombination pathways and hole leakage behavior in InGaN/GaN multiple quantum wells with V-shaped pits

3. High efficiency improvements in AlGaN-based ultraviolet light-emitting diodes with specially designed AlGaN superlattice hole and electron blocking layers[J];yit;Superlattices and Microstructures,2017

4. Application of ultraviolet light-emitting diodes (UV-LEDs) for water disinfection: A review

5. Optimization of structure parameters for highly efficient AlGaN based deep ultraviolet light emitting diodes

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