Author:
Correia M.R.,Pereira S.,Pereira E.,Sá Ferreira R.A.,Frandon J.,Alves E.,Watson I.M.,Liu C.,Morel A.,Gil B.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference25 articles.
1. J.H. Edgar, S. Strite, I. Akasaki (Eds.), Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, INSPEC, 1999, A.7.11, p. 264
2. Compositional dependence of the strain-free optical band gap in InxGa1−xN layers
3. Mapping In concentration, strain, and internal electric field in InGaN/GaN quantum well structure
4. Structural and optical properties of InGaN/GaN layers close to the critical layer thickness
5. The dependence of the optical energies on InGaN composition
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