Mapping In concentration, strain, and internal electric field in InGaN/GaN quantum well structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1689400
Reference18 articles.
1. Nitride-based semiconductors for blue and green light-emitting devices
2. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
3. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
4. Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences
5. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
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