Measurement of internal electrical field across InGaN quantum wells in GaN LEDs-Reference-Cited by-同舟云学术

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Measurement of internal electrical field across InGaN quantum wells in GaN LEDs

Published:2021-06 Issue: Volume:265 Page:124514
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Huang C.K.,Cheng C.,Lai W.H.,Chung C.C.,Chang P.J.,Liu C.Y.^ORCID

Funder

Taiwan Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Mapping in concentration, strain, and internal electric field in InGaN/GaN quantum well structure;Takeguchi;Appl. Phys. Lett.,2004

2. Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks;Lin;Appl. Phys. Lett.,2012

3. Thermal expansion of gallium nitride;Leszczynski;J. Appl. Phys.,1994

4. Anelasticity of GaN epitaxial layer in GaN LED;Chung;Mater. Res. Express,2016

5. High internal electric field in a graded-width InGaN/GaN quantum well: accurate determination by time-resolved photoluminescence spectroscopy;Lefebvre;Appl. Phys. Lett.,2001

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1. Competition between built-in polarization and p–n junction field in III-nitride heterostructures;Journal of Applied Physics;2023-12-26

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