Anelasticity of GaN Epitaxial Layer in GaN LED
Author:
Publisher
IOP Publishing
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/2053-1591/3/i=10/a=105026/pdf
Reference19 articles.
1. A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs
2. Investigations on the performance of multiquantum barriers in short wavelength (630 nm) AlGaInP laser diodes
3. AlGaN/GaN HEMTs-an overview of device operation and applications
4. Dielectric and anelastic relaxation of crystals containing point defects
5. Effect of periodic deflector embedded in InGaN∕GaN light emitting diode
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Measurement of internal electrical field across InGaN quantum wells in GaN LEDs;Materials Chemistry and Physics;2021-06
2. Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs Under Fast Cyclic Transient Stress;IEEE Transactions on Device and Materials Reliability;2020-09
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