The dependence of the optical energies on InGaN composition-Reference-Cited by-同舟云学术

The dependence of the optical energies on InGaN composition

Published:2001-05 Issue:1-3 Volume:82 Page:194-196
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

O'Donnell K.P,Martin R.W,Trager-Cowan C,White M.E,Esona K,Deatcher C,Middleton P.G,Jacobs K,Van der Stricht W,Merlet C,Gil B,Vantomme A,Mosselmans J.F.W

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Origin of Luminescence from InGaN Diodes

2. Exciton localization and the Stokes’ shift in InGaN epilayers

3. Optical linewidths of InGaN light emitting diodes and epilayers

4. Effect of disorder on the optical spectra of wide-gap II–VI semiconductor solid solutions

5. Strong Carrier Localization in GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

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