Compositional dependence of the strain-free optical band gap in InxGa1−xN layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1358368
Reference32 articles.
1. InGaN-based blue light-emitting diodes and laser diodes
2. Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition
3. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
4. Origin of Luminescence from InGaN Diodes
5. Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer
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