Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.127026
Reference13 articles.
1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
2. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
3. Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth
4. Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
5. Origin of Luminescence from InGaN Diodes
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2. InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO2 reduction to formic acid;Solar Energy Materials and Solar Cells;2017-07
3. Cathodoluminescence Studies of InGaN/GaN Multiple Quantum Well Structure Grown by Metal Organic Chemical Vapor Deposition;ECS Transactions;2013-05-02
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