Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125444
Reference19 articles.
1. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
2. Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy
3. Time-resolved spectroscopy of InxGa1−xN/GaN multiple quantum wells at room temperature
4. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
5. Origin of Luminescence from InGaN Diodes
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