Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots

Abstract

Traditional methods for synthesizing InGaN quantum dots (QDs), such as the Stranski-Krastanov growth, often result in QD ensembles with low density and non-uniform size distribution. To overcome these challenges, forming QDs using photoelectrochemical (PEC) etching with coherent light has been developed. Anisotropic etching of InGaN thin films is demonstrated here with PEC etching. InGaN films are etched in dilute H2SO4 and exposed to a pulsed 445 nm laser with a 100 mW/cm2 average power density. Two potentials (0.4 V or 0.9 V) measured with respect to an AgCl|Ag reference electrode are applied during PEC etching, resulting in different QDs. Atomic force microscope images show that while the QD density and sizes are similar for both applied potentials, the heights are more uniform and match the initial InGaN thickness at the lower applied potential. Schrodinger-Poisson simulations show that polarization-induced fields in the thin InGaN layer prevent positively charged carriers (holes) from arriving at the c-plane surface. These fields are mitigated in the less polar planes resulting in high etch selectivity for the different planes. The higher applied potential overcomes the polarization fields and breaks the anisotropic etching.