High‐Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures-Reference-Cited by-同舟云学术

High‐Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures

Published:2022-06-05 Issue:22 Volume:9 Page:2200323
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Park Bumsu¹²^ORCID,Lee Ja Kyung¹,Koch Christoph T.³,Wölz Martin⁴,Geelhaar Lutz⁴,Oh Sang Ho¹⁵^ORCID

Affiliation:

1. Department of Energy Science Sungkyunkwan University Suwon 16419 Republic of Korea

2. CEMES‐CNRS 29 rue J. Marvig Toulouse 31 055 France

3. Department of Physics Humboldt University of Berlin Berlin 12489 Germany

4. Paul‐Drude‐Institut für Festkörperelektronik Leibniz‐Institut im Forschungsverbund Berlin e.V. Hausvogteiplatz 5–7 Berlin 10117 Germany

5. Department of Energy Engineering KENTECH Institute for Energy Materials and Devices Korea Institute of Energy Technology (KENTECH) Naju 58330 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202200323

Reference41 articles.

1. Band parameters for III–V compound semiconductors and their alloys

2. Compositional dependence of the strain-free optical band gap in InxGa1−xN layers

3. Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition

4. Solid phase immiscibility in GaInN

5. Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires

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