Temperature dependency of double material gate oxide (DMGO) symmetric dual-k spacer (SDS) wavy FinFET
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. High-performance and robust SRAM cell based on asymmetric dual-k spacer FinFETs;Pal;Electron Devices IEEE Trans.,2013
2. Investigation of symmetric dual-(k) spacer trigate FinFETs from delay perspective;Pal;Electron Devices IEEE Trans.,2014
3. The International Technology Roadmap for Semiconductors,2013
4. Simulation study of a 3-D device integrating FinFET and UTBFET;Fahad;Electron Devices IEEE Trans.,2015
5. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors;Lee;J. Appl. Phys.,2005
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