Temperature Dependence of Multi-fin FinFET for Bulk and SOI Substrate at 20 nm Channel Length-Reference-Cited by-同舟云学术

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Temperature Dependence of Multi-fin FinFET for Bulk and SOI Substrate at 20 nm Channel Length

Published:2021 Issue: Volume: Page:487-494
ISSN:2366-2557
Container-title:Lecture Notes in Civil Engineering
language:
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Author:

Singh Sarvesh,Gill Sandeep Singh,Kaur Navneet

Publisher

Springer Singapore

Link

http://link.springer.com/content/pdf/10.1007/978-981-15-9554-7_44

Reference8 articles.

1. Chiarella T et al (2010) Benchmarking SOI and Bulk FinFET alternatives for planar CMOS scaling succession. Solid-State Electron 54:855–860

2. Simoen E, Claeys C, Oliveira AV, Agopian PGD, Martino JA (2015) High temperature influence on analog parameters of bulk and SOI nFinFETs. IEEE EUROSOI-Ultimate Integr Silicon 15:6911–6914

3. Pradhan KP, Priyanka S, Sahu PK (2016) Temperature dependency of double material gate oxide (DMGO) symmetric dual-k spacer (SDS) wavy FinFET. Superlattices Microstruct 89:355–361

4. Atalla Y, Hashim Y, Ghafar ANA, Jabbar WA (2019) A temperature characterization of (Si-FinFET) based on channel oxide thickness. TELKOMNIKA 17(5):2475–2480

5. Cogenda User’s Guides. https://www.cogenda.com/article/downloads. Accessed 13 Dec 2019

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