Comparison of Electrical Characteristics of Si Homojunction and SiGe Heterojunction 14 nm SOI FinFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,General Computer Science
Link
https://link.springer.com/content/pdf/10.1007/s40031-021-00699-y.pdf
Reference32 articles.
1. P.K. Bondyopadhyay, Moore’s law governs the silicon revolution. Proc. IEEE 86(1), 78–81 (1998)
2. J.P. Colinge, FinFETs and OtherMulti-Gate Transistors (Springer, New York, 2008)
3. I. Ferain, C.A. Colinge, J.P. Colinge, Multigate transistors as the future of classical metal-oxide semiconductor field-effect transistors. Nature 479, 310–316 (2011)
4. A. Gill , C. Madhu , P. Kaur (2015) Investigation of short channel effects in Bulk MOSFET and SOI FinFET at 20nm node technology. In: Annual IEEE India Conference, pp 1–4.
5. S. Dutta, S. Mittal, S. Lodha, J. Schulze, U.A. Ganguly (2015) A Bulk Planar SiGe Quantum-Well Based ZRAM with Low VT Variability. In: IEEE International Memory Workshop, pp 1–4.
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