Impact & Analysis of Inverted-T shaped Fin on the Performance parameters of 14-nm heterojunction FinFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01708-5.pdf
Reference45 articles.
1. Fasarakis N, Karatsori TA, Tsormpatzoglou A et al (2014) Compact modeling of nanoscale trapezoidal FinFETs. IEEE Trans Electron Dev 61:324–332
2. Schaller RR (1997) Moore’s law: past, present, and future. IEEE Spectr 34:53–59
3. Tsuchiya T, Sato Y, Tomizawa M (1998) Threeme chanisms determining short-channel effects in fully-depleted SOI MOSFETs. IEEE Trans Electron Dev 45:1116–1121
4. Pierret RF (1996) Semiconductor Device Fundamentals. Pearson Education, Delhi
5. Chang L, Tang S, King TJ, Bokor J, Hu C (2000) Gate length scaling and threshold voltage control of double-gate MOSFETs. International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), pp 719–722
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