AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

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AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

Published:2006-10 Issue:4-6 Volume:40 Page:295-299
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Joblot S.,Cordier Y.,Semond F.,Chenot S.,Vennéguès P.,Tottereau O.,Lorenzini P.,Massies J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

2. Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off

3. Growth and characterization of AlGaN/GaN HEMT on SiCOI substrates

4. Epitaxial relationship in the AlN/Si(001) heterosystem

5. AlGaN∕GaN HEMTs on (001) silicon substrates

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective area growth of high quality GaN nanocolumns on Si(0 0 1) by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2023-12

2. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review;Materials Science in Semiconductor Processing;2022-11

3. Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3MBE;IEEE Electron Device Letters;2016-12

4. Growth of GaN films on silicon (111) by thermal vapor deposition method: Optical functions and MSM UV photodetector applications;Superlattices and Microstructures;2013-12

5. Epitaxial Interfaces between Crystallographically Mismatched Materials;Physical Review Letters;2011-07-08

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