Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124861
Reference18 articles.
1. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
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3. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
4. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
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