1. Evidence of single domain switching in Hafnium Oxide based FeFETs: enabler for multi-level FeFET memory cells;Mulaosmanovic;IEDM Tech. Dig.,2015
2. Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors;Kwon;IEEE Electron. Device Lett.,2018
3. Ferroelectric HfZrOx Ge and GeSn PMOSFETs with sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved IDS;Zhou;IEDM Tech. Dig.,2016
4. Frequency dependence of performance in Ge negative capacitance PFETs achieving sub-30 mV/decade swing and 110 mV hysteresis at MHz;Zhou;IEDM Tech. Dig.,2017
5. Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs;Lee;IEDM Tech. Dig.,2016