Oxygen scavenging of HfZrO<sub>2</sub>-based capacitors for improving ferroelectric properties-Reference-Cited by-同舟云学术

Oxygen scavenging of HfZrO₂-based capacitors for improving ferroelectric properties

Published:2022 Issue:19 Volume:4 Page:4114-4121
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Kim Bong Ho¹,Kuk Song-hyeon¹,Kim Seong Kwang¹,Kim Joon Pyo¹,Geum Dae-Myeong¹,Baek Seung-Hyub²^ORCID,Kim Sang Hyeon¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 34141 Daejeon, Republic of Korea

2. Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), 02792 Seoul, Republic of Korea

Abstract

We demonstrate the successful remote oxygen scavenging of HZO-based capacitors, highlighting the significant enhancement of remanent polarization, switching voltage, endurance, and retention.

Funder

National Research Foundation of Korea

IC Design Education Center

Korea Advanced Institute of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NA/D2NA00533F

Reference54 articles.

1. Piezo-Electric and Allied Phenomena in Rochelle Salt

2. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

3. Ferroelectricity in undoped hafnium oxide

4. Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

5. Enhancing ferroelectricity in dopant-free hafnium oxide

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