A comparative study of the structural and electrical properties of n-type InGaN epilayer grown by MBE and commercially
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. Electrical and structural properties of Ir/Ru Schottky rectifiers on n-type InGaN at different annealing temperatures
2. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy
3. Compositional inhomogeneity and immiscibility of a GaInN ternary alloy
4. Nitrogen supply rate dependence of InGaN growth properties, by RF-MBE
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3. Investigation on the effect of indium composition on ultrafast carrier dynamics in InGaN alloys;Japanese Journal of Applied Physics;2018-11-27
4. Investigation of structural and optical properties of GaN on flat and porous silicon;Superlattices and Microstructures;2016-09
5. Fabrication and characterization of metal–semiconductor–metal photodetector based on porous InGaN;Materials Chemistry and Physics;2014-03
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