Porous InGaN-based metal-semiconductor-metal: Morphology and optical studies

Author:

Yamina André ,Igor Nabiev

Abstract

In this study, the characteristics of metal-semiconductor-metal (MSM) photodetector based on a porous In0.27Ga0.73N thin film were reported. Nanostructured porous film was synthesized using the UV-assisted electrochemical etching technique. The formed pores were dissimilar in terms of shape and size. The effect of annealing in the range of 300e500 o C on Pt/In0.27Ga0.73N was investigated by I-V measurements. Schottky barrier height was at maximum value under 500 o C. The fabricated MSM photodetector shows photovoltaic characteristics in the green region of the electromagnetic spectrum. The device responsivity increased with increasing the bias voltage.

Publisher

Iraqi Forum for Intellectuals and Academics

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