Author:
Yamina André ,Igor Nabiev
Abstract
In this study, the characteristics of metal-semiconductor-metal (MSM) photodetector based on a porous In0.27Ga0.73N thin film were reported. Nanostructured porous film was synthesized using the UV-assisted electrochemical etching technique. The formed pores were dissimilar in terms of shape and size. The effect of annealing in the range of 300e500 o C on Pt/In0.27Ga0.73N was investigated by I-V measurements. Schottky barrier height was at maximum value under 500 o C. The fabricated MSM photodetector shows photovoltaic characteristics in the green region of the electromagnetic spectrum. The device responsivity increased with increasing the bias voltage.
Publisher
Iraqi Forum for Intellectuals and Academics
Reference29 articles.
1. -[1] S.H. Abud, A. Ramiy, A.S. Hussein, Z. Hassan, F.K. Yam, Superlatt. Microstruct. 60 (2013) 224
2. -[2] E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart, MRS Online Proc. Libr. 622 (2000) 723
3. -[3] Ali H. AL-Hamdani, Mohammed A.R. Hussein, Aya H. Makki, Exp. Theo. NANOTECHNOLOGY 3 (2019) 1
4. -[4] S.-P. Chang, S.-J. Chang, C.-Y. Lu, Y.-Z. Chiou, R.W. Chuang, H.-C. Lin, J. Cryst.Growth 311 (2009) 3003
5. -[5] F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, Y. Zheng, Solid State Electron. 57 (2011) 39