Present Status of III-Nitride Based Photodetectors-Reference-Cited by-同舟云学术

Present Status of III-Nitride Based Photodetectors

Published:2000 Issue: Volume:622 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Monroy Eva,Calle Fernando,Pau José Luis,Muñoz Elías,Omnès Franck,Beaumont Bernard,Gibart Pierre

Abstract

ABSTRACTThis paper describes the characteristics of a variety of AlGaN-based photodetectors (photoconductors, metal-semiconductor-metal photodiodes, Schottky photodiodes and p-i-n photodiodes), grown on sapphire by metalorganic vapor phase epitaxy. The features that determine their performance are analyzed. Results using other substrates (epitaxial lateral overgrown GaN, Si) are also presented.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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