Investigation of structural and optical properties of GaN on flat and porous silicon
Author:
Funder
University of Kufa, RU Top Down
Universiti Sains Malaysia
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. Self-catalytic growth and characterization of composite (GaN, InN) nanowires
2. MOCVD growth of GaN on porous silicon substrates
3. Improved MOCVD growth of GaN on Si-on-porous-silicon substrates
4. pH response of GaN surfaces and its application for pH-sensitive field-effect transistors
5. Photocatalysis Using GaN Nanowires
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1. Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition;Scientific Reports;2023-11-29
2. Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi substrates;Optical Materials;2023-11
3. Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface;Photonics;2023-10-30
4. Fabrication of GaN nanocrystalline thin films Schottky metal-semiconductor-metal ultraviolet photodetectors;Optik;2022-09
5. Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma nitrogen activation;Optical Materials;2022-06
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