Improved MOCVD growth of GaN on Si-on-porous-silicon substrates-Reference-Cited by-同舟云学术

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Improved MOCVD growth of GaN on Si-on-porous-silicon substrates

Published:2010-04-26 Issue:7-8 Volume:7 Page:2049-2051
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Ishikawa H.,Shimanaka K.,Azfar bin M. Amir M.,Hara Y.,Nakanishi M.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi substrates;Optical Materials;2023-11

2. Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface;Photonics;2023-10-30

3. Preparation and Characterization of UV-Enhanced GaN/ Porous Si Photodetector using PLA in Liquid;Silicon;2023-07-24

4. Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma nitrogen activation;Optical Materials;2022-06

5. MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates;Coatings;2022-05-03

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